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2N3906S-RTK/P Datasheet
Datasheet specifications
| Datasheet's name | 2N3906S-RTK/P |
|---|---|
| File size | 49.781 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet 2N3906S-RTK/P |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: KEC Semicon 2N3906S-RTK/P
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 200mA
- Power Dissipation (Pd): 350mW
- Transition Frequency (fT): 250MHz
- DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
- Collector Cut-Off Current (Icbo): -
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@50mA,5mA
- Package: SOT-23
- Manufacturer: KEC Semicon